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six igbt + brake nx-series module 150 amperes/1200 volts CM150RX-24S 1 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex igbt modules are designed for use in switching applications. each module consists of six igbt transistors in a three phase bridge configuration and a seventh igbt with free- wheel diode for dynamic braking. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control photovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. CM150RX-24S is a 1200v (v ces ), 150 ampere six-igbt + brake power module. type current rating v ces amperes volts (x 50) cm 150 24 outline drawing and circuit diagram dimensions inches millimeters a 5.39 136.9 b 3.03 77.1 c 0.67+0.04/-0.02 17.0+1.0/-0.5 d 4.79 121.7 e 4.330.02 110.00.5 f 3.89 99.0 g 3.72 94.5 h 0.83 21.14 j 0.37 6.5 k 2.44 62.0 l 2.26 57.5 m 1.970.02 50.00.5 n 1.53 39.0 p 0.24 6.0 q 0.48 12.0 r 0.67 17.0 s 1.53 39.0 t 0.87 22.0 u 0.55 14.0 v 0.54 13.64 w 0.33 8.5 x 0.53 13.5 y 0.81 20.71 z 0.9 22.86 aa 0.22 dia. 5.5 dia. ab m5 m5 dimensions inches millimeters ac 0.12 3.0 ad 0.51 13.0 ae 0.102 dia. 2.6 dia. af 0.21 5.4 ag 0.49 12.5 ah 0.81 20.5 aj 0.088 dia. 2.25 dia. ak 0.59 15.00 al 0.15 3.81 am 0.45 11.43 an 0.14 3.5 ap 0.75 19.05 aq 0.05 1.2 ar 0.03 0.8 as 0.27 7.0 at 0.77 19.68 au 0.49 12.5 av 0.60 15.24 aw 0.46 11.66 ax 0.04 1.15 ay 0.02 0.65 az 0.29 7.4 ba 0.17 dia. 4.3 dia. bb 0.30 7.75 bc 0.14 3.75 p(35) b(4) gwn(14) gwp(18) e s wp(17) gvn(22) gvp(26) e s vp(25) gun(30) e s wn(13) e s vn(21) e s un(29) gup(34) e s up(33) u(1) v(2) w(3) gb(6) n(36) th 1 (11) th 2 (10) ntc e s b(5) a ah az aq q r s t u v h x y z z n m l k b an am am am am ap am ak al ax ay al al al al al al z r q q r d e f g h bb j p p w j p aa(4 places) detail "b" ab (6 places) detail "a" 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 35 36 1 2 3 4 11 10 9 8 7 6 5 detail "b" c r ah at bc aw as ar al av ad af ag au ba ae aj ac detail "a" tolerance otherwise specified (mm) the tolerance of size between terminals is assumed to 0.4 division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1. 2
CM150RX-24S six igbt + brake nx-series module 150 amperes/1200 volts 2 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1200 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 120c) *2,*4 i c 150 amperes collector current (pulse, repetitive) *3 i crm 300 amperes total power dissipation (t c = 25c) *2,*4 p tot 1150 watts emitter current *2 i e *1 150 amperes emitter current (pulse, repetitive) *3 i erm *1 300 amperes brake part igbt/clampdi characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1200 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 122c) *2,*4 i c 75 amperes collector current (pulse, repetitive) *3 i crm 150 amperes total power dissipation (t c = 25c) *2,*4 p tot 600 watts repetitive peak reverse voltage (v ge = 0v) v rrm 1200 volts forward current *2 i e *1 75 amperes forward current (pulse, repetitive) *3 i erm *1 150 amperes module characteristics symbol rating units isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 2500 volts maximum junction temperature, instantaneous event (overload) t j(max) 175 c maximum case temperature *4 t c(max) 125 c operating junction temperature, continuous operation (under switching) t j(op) -40 to +150 c storage temperature t stg -40 to +125 c *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 35 36 1 2 3 4 11 10 9 8 7 6 5 0 0 22.7 15.3 1 7. 6 26.0 22.6 28.4 34.4 label side each mark points to the center position of each chip. tr*p / tr*n / trbr (* = u/v/w): igbt di*p / di*n (* = u/v/w): fwdi dibr: clamp th: ntc thermistor 23.6 37.1 0 50.3 71.0 108.7 73.5 84.3 97.8 103.9 32.3 42.8 21.5 106.1 di up di un di vn di wn di br tr br tr un tr vn tr wn th di vp tr up tr wp tr vp di wp
CM150RX-24S six igbt + brake nx-series module 150 amperes/1200 volts 3 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 15ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 150a, v ge = 15v, t j = 25c *5 1.80 2.25 volts (terminal) i c = 150a, v ge = 15v, t j = 125c *5 2.00 volts i c = 150a, v ge = 15v, t j = 150c *5 2.05 volts collector-emitter saturation voltage v ce(sat) i c = 150a, v ge = 15v, t j = 25c *5 1.70 2.15 volts (chip) i c = 150a, v ge = 15v, t j = 125c *5 1.90 volts i c = 150a, v ge = 15v, t j = 150c *5 1.95 volts input capacitance c ies 15 nf output capacitance c oes v ce = 10v, v ge = 0v 3.0 nf reverse transfer capacitance c res 0.25 nf gate charge q g v cc = 600v, i c = 150a, v ge = 15v 350 nc turn-on delay time t d(on) 800 ns rise time t r v cc = 600v, i c = 150a, v ge = 15v, 200 ns turn-off delay time t d(off) r g = 0?, inductive load 600 ns fall time t f 300 ns emitter-collector voltage v ec *1 i e = 150a, v ge = 0v, t j = 25c *5 1.80 2.25 volts (terminal) i e = 150a, v ge = 0v, t j = 125c *5 1.80 volts i e = 150a, v ge = 0v, t j = 150c *5 1.80 volts emitter-collector voltage v ec *1 i e = 150a, v ge = 0v, t j = 25c *5 1.70 2.15 volts (chip) i e = 150a, v ge = 0v, t j = 125c *5 1.70 volts i e = 150a, v ge = 0v, t j = 150c *5 1.70 volts reverse recovery time t rr *1 v cc = 600v, i e = 150a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 0?, inductive load 8.0 c turn-on switching energy per pulse e on v cc = 600v, i c = i e = 150a, 24.2 mj turn-off switching energy per pulse e off v ge = 15v, r g = 0?, 16 mj reverse recovery energy per pulse e rr *1 t j = 150c, inductive load 12.2 mj internal lead resistance r cc' + ee' main terminals-chip, 1.8 m? per switch,t c = 25c *4 internal gate resistance r g per switch 13 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *5 pulse width and repetition rate should be such as to cause negligible temperature rise. 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 35 36 1 2 3 4 11 10 9 8 7 6 5 0 0 22.7 15.3 1 7. 6 26.0 22.6 28.4 34.4 label side each mark points to the center position of each chip. tr*p / tr*n / trbr (* = u/v/w): igbt di*p / di*n (* = u/v/w): fwdi dibr: clamp th: ntc thermistor 23.6 37.1 0 50.3 71.0 108.7 73.5 84.3 97.8 103.9 32.3 42.8 21.5 106.1 di up di un di vn di wn di br tr br tr un tr vn tr wn th di vp tr up tr wp tr vp di wp
CM150RX-24S six igbt + brake nx-series module 150 amperes/1200 volts 4 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed brake part igbt/clampdi characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 7.5ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 75a, v ge = 15v, t j = 25c *5 1.80 2.25 volts (terminal) i c = 75a, v ge = 15v, t j = 125c *5 2.00 volts i c = 75a, v ge = 15v, t j = 150c *5 2.05 volts collector-emitter saturation voltage v ce(sat) i c = 75a, v ge = 15v, t j = 25c *5 1.70 2.15 volts (chip) i c = 75a, v ge = 15v, t j = 125c *5 1.90 volts i c = 75a, v ge = 15v, t j = 150c *5 1.95 volts input capacitance c ies 7.5 nf output capacitance c oes v ce = 10v, v ge = 0v 1.5 nf reverse transfer capacitance c res 0.13 nf gate charge q g v cc = 600v, i c = 75a, v ge = 15v 175 nc turn-on delay time t d(on) 300 ns rise time t r v cc = 600v, i c = 75a, v ge = 15v, 200 ns turn-off delay time t d(off) r g = 8.2?, inductive load 600 ns fall time t f 300 ns repetitive peak reverse current i rrm v r = v rrm , v ge = 0v 1.0 ma forward voltage v f i e = 75a, v ge = 0v, t j = 25c *5 1.80 2.25 volts (terminal) i e = 75a, v ge = 0v, t j = 125c *5 1.80 volts i e = 75a, v ge = 0v, t j = 150c *5 1.80 volts forward voltage v f i e = 75a, v ge = 0v, t j = 25c *5 1.70 2.15 volts (chip) i e = 75a, v ge = 0v, t j = 125c *5 1.70 volts i e = 75a, v ge = 0v, t j = 150c *5 1.70 volts reverse recovery time t rr *1 v cc = 600v, i e = 75a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 8.2?, inductive load 4.0 c turn-on switching energy per pulse e on v cc = 600v, i c = i e = 75a, 7.3 mj turn-off switching energy per pulse e off v ge = 15v, r g = 8.2?, 8.0 mj reverse recovery energy per pulse e rr *1 t j = 150c, inductive load 6.9 mj internal gate resistance r g 0 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *5 pulse width and repetition rate should be such as to cause negligible temperature rise. 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 35 36 1 2 3 4 11 10 9 8 7 6 5 0 0 22.7 15.3 1 7. 6 26.0 22.6 28.4 34.4 label side each mark points to the center position of each chip. tr*p / tr*n / trbr (* = u/v/w): igbt di*p / di*n (* = u/v/w): fwdi dibr: clamp th: ntc thermistor 23.6 37.1 0 50.3 71.0 108.7 73.5 84.3 97.8 103.9 32.3 42.8 21.5 106.1 di up di un di vn di wn di br tr br tr un tr vn tr wn th di vp tr up tr wp tr vp di wp
CM150RX-24S six igbt + brake nx-series module 150 amperes/1200 volts 5 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed (continued) ntc thermistor part characteristics symbol test conditions min. typ. max. units zero power resistance r 25 t c = 25c *4 4.85 5.00 5.15 k? deviation of resistance ? r/r t c = 100c *4 , r 100 = 493? -7.3 +7.8 % b constant b (25/50) approximate by equation *6 3375 k power dissipation p 25 t c = 25c *4 10 mw thermal resistance characteristics thermal resistance, junction to case *4 r th(j-c) q per inverter igbt 0.13 k/w thermal resistance, junction to case *4 r th(j-c) d per inverter fwdi 0.23 k/w thermal resistance, junction to case *4 r th(j-c) q per brake igbt 0.25 k/w thermal resistance, junction to case *4 r th(j-c) d per brake clampdi 0.40 k/w contact thermal resistance, r th(c-f) thermal grease applied, 15 k/kw case to heatsink *4 per 1 module *7 mechanical characteristics mounting torque m t main terminal, m5 screw 22 27 31 in-lb mounting torque m s mounting to heatsink, m5 screw 22 27 31 in-lb creepage distance d s terminal to terminal 10.25 mm terminal to baseplate 12.32 mm clearance d a terminal to terminal 10.28 mm terminal to baseplate 10.85 mm weight m 370 g flatness of baseplate e c on centerline x, y *8 0 100 m recommended operating conditons, t a = 25c dc supply voltage v cc applied across p-n terminals 600 850 volts gate-emitter drive voltage v ge(on) applied across 13.5 15.0 16.5 volts g*p-es*p/g*n-es*n (* = u, v, w) terminals external gate resistance r g per switch inverter igbt 0 30 ? per switch brake igbt 8.2 82 ? *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *6 b (25/50) = in( r 25 )/( 1 C 1 ) r 50 t 25 t 50 r 25 ; resistance at absolute temperature t 25 [k]; t 25 = 25 [c] + 273.15 = 298.15 [k] r 50 ; resistance at absolute temperature t 50 [k]; t 50 = 50 [c] + 273.15 = 323.15 [k] *7 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *8 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. ? : concave + : convex ? : concave x y + : convex mounting side mounting side mounting side 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 35 36 1 2 3 4 11 10 9 8 7 6 5 0 0 22.7 15.3 1 7. 6 26.0 22.6 28.4 34.4 label side each mark points to the center position of each chip. tr*p / tr*n / trbr (* = u/v/w): igbt di*p / di*n (* = u/v/w): fwdi dibr: clamp th: ntc thermistor 23.6 37.1 0 50.3 71.0 108.7 73.5 84.3 97.8 103.9 32.3 42.8 21.5 106.1 di up di un di vn di wn di br tr br tr un tr vn tr wn th di vp tr up tr wp tr vp di wp
CM150RX-24S six igbt + brake nx-series module 150 amperes/1200 volts 6 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 0 1.0 2.0 3.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (inverter part - typical) 10 2 10 3 collector-emitter saturation voltage characteristics (inverter part - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c i c = 300a i c = 150a i c = 60a collector-emitter voltage, v ce , (volts) output characteristics (inverter part - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13.5 9 t j = 25 c 300 200 250 150 50 100 collector current, i c , (amperes) collector-emitter saturation voltage characteristics (inverter part - typical) 3.5 3.0 0 2.0 2.5 1.0 1.5 0.5 0 300 200 250 150 100 50 15 t j = 25c t j = 125c t j = 150c t j = 25c t j = 125c t j = 150c gate-emitter voltage, v ge , (volts) emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts )
CM150RX-24S six igbt + brake nx-series module 150 amperes/1200 volts 7 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector-emitter voltage, v ce , (volts) capacitance vs. v ce (inverter part - typical) 10 0 10 2 10 2 10 1 10 0 10 -1 10 -2 10 1 v ge = 0v c ies c oes c res 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 half-bridge switching characteristics (inverter part - typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load t f 10 3 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 half-bridge switching characteristics (inverter part - typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load t f 10 3 external gate resistance, r g , (?) 10 3 10 0 10 1 10 2 10 1 switching time vs. gate resistance (inverter part - typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 150a t j = 125c inductive load t f 10 2 capacitance, c ies , c oes , c res , (nf) switching time, (ns) switching time, (ns) switching time, (ns)
CM150RX-24S six igbt + brake nx-series module 150 amperes/1200 volts 8 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com external gate resistance, r g , (?) 10 3 10 0 10 1 10 2 10 1 switching time vs. gate resistance (inverter part - typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 150a t j = 150c inductive load t f 10 2 gate charge, q g , (nc) gate charge vs. v ge (inverter part) 20 0 16 12 8 4 0 100 500 300 400 200 i c = 150a v cc = 600v emitter current, i e , (amperes) reverse recovery characteristics (inverter part - typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load i rr t rr emitter current, i e , (amperes) reverse recovery characteristics (inverter part - typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load i rr t rr switching time, (ns) gate-emitter voltage, v ge , (volts) reverse recovery, i rr (a), t rr (ns) reverse recovery, i rr (a), t rr (ns)
CM150RX-24S six igbt + brake nx-series module 150 amperes/1200 volts 9 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate resistance, r g , (?) 10 2 10 -1 10 0 10 1 10 1 10 0 v cc = 600v v ge = 15v i c /i e = 150a t j = 150c inductive load 10 2 half-bridge switching characteristics (inverter part - typical) v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load e on e off e rr collector current, i c , (amperes) emitter current, i e , (amperes) 10 2 10 1 10 2 10 1 10 0 10 3 half-bridge switching characteristics (inverter part - typical) e on e off e rr v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load e on e off e rr collector current, i c , (amperes) emitter current, i e , (amperes) 10 2 10 1 10 2 10 1 10 0 10 3 half-bridge switching characteristics (inverter part - typical) gate resistance, r g , (?) 10 2 10 -1 10 0 10 1 10 1 10 0 v cc = 600v v ge = 15v i c /i e = 150a t j = 125c inductive load 10 2 half-bridge switching characteristics (inverter part - typical) e on e off e rr switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj)
CM150RX-24S six igbt + brake nx-series module 150 amperes/1200 volts 10 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (inverter part - maximum) 10 0 10 -1 10 -2 10 -3 10 -5 10 -3 10 -4 10 -2 10 -1 10 0 10 1 single pulse t c = 25c per unit base = r th(j-c) = 0.13k/w (igbt) r th(j-c) = 0.23k/w (fwdi) collector current, i c , (amperes) collector-emitter saturation voltage characteristics (brake part - typical) 3.5 3.0 0 2.0 2.5 0.5 1.5 1.0 0 150 100 50 t j = 25c t j = 125c t j = 150c 0 0.5 1.5 2.0 1.0 3.0 2.5 10 0 10 1 forward current i f , (amperes) free-wheel diode forward characteristics (brake part - typical) 10 3 10 2 collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 0 10 1 half-bridge switching characteristics (brake part - typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 8.2 t j = 125c inductive load t f 10 2 t j = 25c t j = 125c t j = 150c z th = r th ? (normalized value) normalized transient thermal impedance, z th(j-c') collector-emitter saturation voltage, v ce(sat) , (volts ) forward voltage, v f , (volts) switching time, (ns)
CM150RX-24S six igbt + brake nx-series module 150 amperes/1200 volts 11 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 0 10 1 half-bridge switching characteristics (brake part - typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 8.2 t j = 150c inductive load t f 10 2 external gate resistance, r g , (?) 10 3 10 0 10 1 10 2 10 1 switching time vs. gate resistance (brake - typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 75a t j = 150c inductive load t f 10 2 external gate resistance, r g , (?) 10 3 10 0 10 1 10 2 10 1 switching time vs. gate resistance (brake - typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 75a t j = 125c inductive load t f 10 2 collector current, i c , (amperes) forward current, i f , (amperes) reverse recovery energy, e rr , (mj) 10 1 10 0 10 1 10 0 10 -1 10 2 10 1 10 0 10 2 half-bridge switching characteristics (brake part - typical) v cc = 600v v ge = 15v r g = 8.2 t j = 125c inductive load e on e off e rr switching time, (ns) switching time, (ns) switching time, (ns) switching energy, e on , e off , (mj)
CM150RX-24S six igbt + brake nx-series module 150 amperes/1200 volts 12 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com half-bridge switching characteristics (brake part - typical) half-bridge switching characteristics (brake part - typical) external gate resistance, r g , (?) 10 2 10 0 10 1 10 1 10 0 10 2 external gate resistance, r g , (?) 10 2 10 0 10 1 10 1 10 0 10 2 collector current, i c , (amperes) forward current, i f , (amperes) 10 0 10 1 10 2 half-bridge switching characteristics (brake part - typical) reverse recovery energy, e rr , (mj) 10 1 10 0 10 -1 10 2 10 1 forward current, i f , (amperes) reverse recovery characteristics (brake part - typical) 10 3 10 0 10 1 10 2 10 1 10 2 switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery, i rr (a), t rr (ns) v cc = 600v v ge = 15v i c /i f = 75a t j = 150c inductive load e on e off e rr v cc = 600v v ge = 15v i c /i f = 75a t j = 125c inductive load v cc = 600v v ge = 15v r g = 8.2 t j = 150c inductive load e on e off e rr v cc = 600v v ge = 15v r g = 8.2 t j = 125c inductive load i rr t rr e on e off e rr 10 0
CM150RX-24S six igbt + brake nx-series module 150 amperes/1200 volts 13 03/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (brake part - maximum) 10 0 10 -1 10 -2 10 -3 10 -5 10 -3 10 -4 10 -2 10 -1 10 0 10 1 single pulse t c = 25c per unit base = r th(j-c) = 0.25k/w (igbt) r th(j-c) = 0.40k/w (fwdi) forward current, i f , (amperes) 10 3 10 0 10 1 10 2 10 1 10 2 v cc = 600v v ge = 15v r g = 8.2 t j = 150c inductive load i rr t rr z th = r th ? (normalized value) normalized transient thermal impedance, z th(j-c') reverse recovery, i rr (a), t rr (ns)

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